The elctrical and deep-level analysis of the low-temperature InGaAs/GaAs superlattice p-i-n structure grown by MBE
碩士 === 國立交通大學 === 電子物理學系 === 85 === To combine the photo-electro properties of the low temperature(LT) GaAs andthe superlattice structure, we used the molecular beam epitaxy system to growthe LT InGaAs/GaAs superlattice p-i-n structure....
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| Format: | Others |
| Language: | zh-TW |
| Published: |
1997
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| Online Access: | http://ndltd.ncl.edu.tw/handle/60203683439036021966 |