Low Temperature Si/SiGe Epitaxy by UHV-CME and its Device Applications
博士 === 國立交通大學 === 電子工程學系 === 85 === Pure Si2H6 and GeH4 are used to grow Si and Si1-xGex epilayers at 550C by ultrahigh vacuum-chemical molecular epitaxy (UHV- CME). 0.1% B2H6 and 100 ppm PH3 diluted in H2 are used as the p- type and N-type dopant gases i...
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
1997
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| Online Access: | http://ndltd.ncl.edu.tw/handle/62305570247287365813 |