Electrical Characteristics of thin oxide
碩士 === 國立交通大學 === 電子工程學系 === 85 === We have studied the inversion layer mobility of n-MOSFET's with thin oxide of 2-7nm.Direct relationship of electron mobility tointerface roughness was obtained from the measured mobility of MOSFET...
Main Authors: | Chang, Tsu, 張慈 |
---|---|
Other Authors: | C.Tsai, Albert Chin |
Format: | Others |
Language: | zh-TW |
Published: |
1997
|
Online Access: | http://ndltd.ncl.edu.tw/handle/43355836550523123070 |
Similar Items
-
Study on the Electrical Characteristics of N2O Thin Oxide
by: Wu Shu Fang, et al.
Published: (1993) -
Comparison of the Electrical Characteristics of MOS Capacitors with Ultra-thin Oxides Grown on P- and N-type Si Substrates
by: Shu-Jau Chang, et al.
Published: (2006) -
Electrical Characteristics and Nanocrystalline Formation of Sprayed Iridium Oxide Thin Films
by: S. A. Mahmoud, et al.
Published: (2010-01-01) -
Improvement of Against Oxidation and Electrical Properties of Passivated Cu(Hf) Thin Film
by: Yu-Tzu Chen, et al.
Published: (2008) -
Electrical characteristics of ultra-thin high-k gate oxide-semiconductor interfaces
by: Wen-Da Liu, et al.
Published: (2002)