Electrical Characteristics of thin oxide

碩士 === 國立交通大學 === 電子工程學系 === 85 === We have studied the inversion layer mobility of n-MOSFET's with thin oxide of 2-7nm.Direct relationship of electron mobility tointerface roughness was obtained from the measured mobility of MOSFET�...

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Bibliographic Details
Main Authors: Chang, Tsu, 張慈
Other Authors: C.Tsai, Albert Chin
Format: Others
Language:zh-TW
Published: 1997
Online Access:http://ndltd.ncl.edu.tw/handle/43355836550523123070

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