Electrical Characteristics of thin oxide
碩士 === 國立交通大學 === 電子工程學系 === 85 === We have studied the inversion layer mobility of n-MOSFET's with thin oxide of 2-7nm.Direct relationship of electron mobility tointerface roughness was obtained from the measured mobility of MOSFET�...
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| Format: | Others |
| Language: | zh-TW |
| Published: |
1997
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| Online Access: | http://ndltd.ncl.edu.tw/handle/43355836550523123070 |