Electrical Characteristics of thin oxide

• Main Authors: Chang, Tsu, 張慈
• Other Authors: C.Tsai, Albert Chin
• Format: Others
• Language: zh-TW
• Published: 1997
• Online Access: http://ndltd.ncl.edu.tw/handle/43355836550523123070

碩士 === 國立交通大學 === 電子工程學系 === 85 === We have studied the inversion layer mobility of n-MOSFET's with thin oxide of 2-7nm.Direct relationship of electron mobility tointerface roughness was obtained from the measured mobility of MOSFET'sand high-resolution TEM.By using low-pressure oxidation process with nativeoxide removed in-situ prior to oxidation, atomically smooth interface ofoxide/Si can be observed by high- resolutional TEM for oxide thicknessof 1.1 and 3.8nm.The roughness increased to 1-2 monolayers of Si in a 5.5nmoxide. Because of the smooth interface and good thickness uniformity ofoxide,both high-field electron mobility and oxide breakdown behaviorare much improved.Significant mobility improvement is obtained from theseoxides with smoother interface than that from conventional furnace oxidation.Mobility reduction in ultra-thin oxide was observed for the first time,which may be due to the remote Coulomb scattering from gate electrode.