| Summary: | 碩士 === 國立交通大學 === 電子工程學系 === 85 === We have studied the inversion layer mobility of n-MOSFET's with
thin oxide of 2-7nm.Direct relationship of electron mobility
tointerface roughness was obtained from the measured mobility of
MOSFET'sand high-resolution TEM.By using low-pressure oxidation
process with nativeoxide removed in-situ prior to oxidation,
atomically smooth interface ofoxide/Si can be observed by high-
resolutional TEM for oxide thicknessof 1.1 and 3.8nm.The
roughness increased to 1-2 monolayers of Si in a 5.5nmoxide.
Because of the smooth interface and good thickness uniformity
ofoxide,both high-field electron mobility and oxide breakdown
behaviorare much improved.Significant mobility improvement is
obtained from theseoxides with smoother interface than that from
conventional furnace oxidation.Mobility reduction in ultra-thin
oxide was observed for the first time,which may be due to the
remote Coulomb scattering from gate electrode.
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