Barrier Property of W-Silicide and Ta-Nitride for Cu Metallization
碩士 === 國立交通大學 === 電子工程學系 === 85 === This thesis studies the diffusion barrier properties of W- silicide and Ta-nitride with respect to Cu metallization. The W-silicide films were depositedby low pressure chemical vapor deposition using...
| Main Authors: | , |
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| Format: | Others |
| Language: | zh-TW |
| Published: |
1997
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| Online Access: | http://ndltd.ncl.edu.tw/handle/41050962115026989006 |