The study of the electrochemical etching of Si and the passivation layer in aqueous KOH
碩士 === 國立交通大學 === 電子工程學系 === 85 === A 500nm silicon nitride film are grown by PECVD on n-type silicon wafer. We have studied the anneal behavior of PECVD nitride film in the KOH solution. Thecomposition of annealing of PECVD nitride film is...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
1997
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| Online Access: | http://ndltd.ncl.edu.tw/handle/46155537821835545360 |