A Study on the Patterning of X-ray Mask
碩士 === 國立交通大學 === 電子工程學系 === 85 === It is the purpose of this thesis to develop the absorber patterning ofx-ray mask required in x-ray lithography. The tungsten film is adopted as absorbers. The satisfactory recipes for sputtering low-stres...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
1997
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| Online Access: | http://ndltd.ncl.edu.tw/handle/97575713939489536630 |
| Summary: | 碩士 === 國立交通大學 === 電子工程學系 === 85 === It is the purpose of this thesis to develop the absorber
patterning ofx-ray mask required in x-ray lithography. The
tungsten film is adopted as absorbers. The satisfactory recipes
for sputtering low-stress absorber were obtained to avoid
distortion during the etching process. The 0.3 umpatterns were
etched sucessfully with vertical sidewall by proper
etchantproportions mixture intermittent process. Finally, we
discuss the proximityeffect on the absorbers for fine line
patterning in electron beam direct write lithography.
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