Gate Oxide Charging Damage Induced by Poly Gate Plasma Etching
碩士 === 國立交通大學 === 電子工程學系 === 85 === Plasma charge-induced damages to thin gate oxides are increasingly becoming serious topics because they directly impact device reliabilityin ultra-large-scale-integrated circuits.In this thesis,poly ga...
| Main Authors: | , |
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| Format: | Others |
| Language: | zh-TW |
| Published: |
1997
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| Online Access: | http://ndltd.ncl.edu.tw/handle/82681741952967647484 |