Study and Application of Reactive Ion Etching on Pseudomorphic InGaP/InGaAs/InGaP HEMTs
碩士 === 國立成功大學 === 電機工程研究所 === 85 === A highly selective reactive ion etching (RIE) process based on BCl3/Ar plasma was applied as a gate-recess technique in fabrication of InGaP/InGaAs/InGaP PHEMT. In our study, we systematically changed the mixing ratio between BCl3 and Ar gases and investigate...
| Main Authors: | , |
|---|---|
| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
1997
|
| Online Access: | http://ndltd.ncl.edu.tw/handle/77489188708794666041 |