Electrical and Optical Properties of ZnSSe Thin Films Grown on Si by Atomic Layer Epitaxy

碩士 === 國立成功大學 === 電機工程學系 === 85 ===   Atomic layer epitaxy (ALE) growth and characterization of ZnSSe on n-type (100) Si substrates are investigated for the first time by a low pressure horizontal MOCVD system using DMZn, H2S and H2Se as the reactants. Energy Dispersive Spectrometer attacehd on Sca...

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Bibliographic Details
Main Authors: Leu, Chia-Jen, 呂嘉仁
Other Authors: Meiso Yokoyama
Format: Others
Language:zh-TW
Published: 1997
Online Access:http://ndltd.ncl.edu.tw/handle/61818064230802360990