Electrical and Optical Properties of ZnSSe Thin Films Grown on Si by Atomic Layer Epitaxy
碩士 === 國立成功大學 === 電機工程學系 === 85 === Atomic layer epitaxy (ALE) growth and characterization of ZnSSe on n-type (100) Si substrates are investigated for the first time by a low pressure horizontal MOCVD system using DMZn, H2S and H2Se as the reactants. Energy Dispersive Spectrometer attacehd on Sca...
Main Authors: | , |
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Other Authors: | |
Format: | Others |
Language: | zh-TW |
Published: |
1997
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Online Access: | http://ndltd.ncl.edu.tw/handle/61818064230802360990 |