The Inflence of Oxygen Partial Pressures and of Metallic Impurities on the Oxidation-Induced Stacking Faults in Silicon
碩士 === 國立中興大學 === 材料工程學研究所 === 85 === This study focus on the influence of (1) controlled oxygen partial pressureand (2) metallic impurities for the oxdation- induced stacking faults (OISF)length and density at high temperture(1) In control...
| Main Authors: | , |
|---|---|
| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
1997
|
| Online Access: | http://ndltd.ncl.edu.tw/handle/00955437402295168350 |