Preparation of high hard DLC by ECR-CVD

• Main Authors: Huang, Kuen-Pyng, 黃昆平
• Other Authors: H.C. Shih
• Format: Others
• Language: zh-TW
• Published: 1997
• Online Access: http://ndltd.ncl.edu.tw/handle/74333601415897195728

碩士 === 國立中興大學 === 材料工程學研究所 === 85 === This research concerns the production of DLC films of high hardness by means of ECR-CVD. During the experiments, the differences between the application of rf bias and dc bias are distinguished. On the one hand, when micro-wave and rf bias are applied simultaneously, the bombardment of high energy electrons on the substrate raises the temperature on the substrate. Thermal relaxation effect is thus resulted, and is unfavorable to the formation of carbon's sp3 bonds, The hardness of the films is consequently unable to be increased. On the other hand, when micro-wave of 600-1000W and dc bias of negative 200-300V are applied simultaneously, of hardness of the highly tetrahedral hydrogenated amorphous carbon (ta-C:H) can reach above Hv=6,224 kg/mm2. The plasma of acetylene untilized in the experiment is examined by means of Optical Emission Spectroscopy, and revealed that the gas of acetylene can be completely ionized into C2+ and H2+ ions, however, without C-H radical Such high quantity of carbon ions, lead to average film growth rate formation can be 0.6 μm/min . The result of this research can help produce efficiently the DLC films of high hardness. The only drawback is the high compressive stress that can cause the films to spall off, and this is what we need to work on in the future.