study on temperature effect of ISFET devices
碩士 === 華梵工學院 === 電子研究所 === 85 === ABSTRACT Ion-sensitive field effect transistors (ISFETs) exist some instable characteri- stics, such as time drift, thermal instability and hysteresis,where the thermal instability is the dominate term to affect device p...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
1997
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| Online Access: | http://ndltd.ncl.edu.tw/handle/31702910935348730320 |