Effect of Hydrogen Etching Mechanism on the Material Characteristics of PECVD a-SiNx:H and Perpormance of a-Si:H TFTs

碩士 === 國立清華大學 === 材料科學(工程)研究所 === 84 ===

Bibliographic Details
Main Authors: W. N. Chaung, 莊文男
Other Authors: J. R. Chen, M. S. Feng   
Format: Others
Language:en_US
Published: 1996
Online Access:http://ndltd.ncl.edu.tw/handle/83717608262141514503