| Summary: | 碩士 === 國立清華大學 === 材料科學(工程)研究所 === 84 === The oxidation of Si catalyzed by Cu3Si at elevated temperatures
has been investigated by transmission electron microscopy, X-
ray diffractometry, and Auger electron spectroscopy. The Cu
films were deposited on Si in ultra-high vacuum eletron beam
evaporation system. For wet oxidation at 150 C for 1 hr, the
oxide layer was grown to 3.4 um in thickness. The presence of
moisture was found to strongly influence the fast oxidation of
Si. For wet oxidation at 250-500 C, the reaction was found to
be not as fast as that at 150 C. The oxidation reaction were
initiated at the surface of Cu3Si and Cu3Si/Si interface. The
oxidation reaction at the interface produce an oxide layer
between copper silicide and Si substrate. The buried oxide
layer acts as a barrier layer for Cu. As a reult, the oxidation
of Si was slowed down as the buried layer was formed on top of
Si substrate.
|
|---|
