MOLECULAR BEAM EPITAXIAL GROWTH AND CHARACTERIZATION OF INDIUM ANTIMONIDE

• Main Authors: Wu, Zhi hao, 吳智豪
• Other Authors: Ueng, herng yih
• Format: Others
• Language: zh-TW
• Published: 1996
• Online Access: http://ndltd.ncl.edu.tw/handle/55223293968464394911

碩士 === 國立中山大學 === 電機工程研究所 === 84 === InSb, which has the narrowest band gap of the binary III-V compounds (0.23 eV at 77 K), has been an excellent material used for infared(IR) detector(operating at wavelengths in the 3~5 μm range). In addition, due to its high mobility and saturation velocity, InSb is also suited for high-speed electric device applications. We grow the InSb films on GaAs substrates by Molecular Beam Epitaxy using high purity solid source In(6N5) and Sb(6N). In order to grew high quality of InSb films, the substrate temperature and V/III flux ratio are the two most important growth parameters during the MBE growth. So, we grow InSb under different substrate temperature range(300 ℃~390℃) and different V/III flux ratio conditions. The InSb films were characterized by EDS, XRD, SEM and Hall measurements. From the examinations of the peak intensity and FWHM in the X-ray diffraction curve patterns, the optimum growth conditions were obtained as substrate temperature 300℃ and V/III BEP ratio 1.62. Surface morphology, which was examined with SEM, indicated smooth plane. In the future, base on the growth and characterization study of InSb films, we expect that further study on the tenary compounds. For example, the growth and characterization study of InGaSb.