MOLECULAR BEAM EPITAXIAL GROWTH AND CHARACTERIZATION OF INDIUM ANTIMONIDE
碩士 === 國立中山大學 === 電機工程研究所 === 84 === InSb, which has the narrowest band gap of the binary III-V compounds (0.23 eV at 77 K), has been an excellent material used for infared(IR) detector(operating at wavelengths in the 3~5 μm range). In addi...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
1996
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| Online Access: | http://ndltd.ncl.edu.tw/handle/55223293968464394911 |