The materials growth and characterization of GaN epitaxial film
碩士 === 國立中央大學 === 物理學系 === 84 === In this thesis, we will report the growth and characterization ofGaN epitaxial materials. We have grown GaN epitaxial layer on C-facesapphire ( Al2O3 ) substrate by low- pressure metalorganic chemicalvapor deposition ( LP...
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| Format: | Others |
| Language: | zh-TW |
| Published: |
1996
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| Online Access: | http://ndltd.ncl.edu.tw/handle/58371224079424425030 |