The study of Deep Levels in Pd and Pt Doped Si P-N Junctions

• Main Authors: Qiu, Ming-Jie, 邱明杰
• Other Authors: Luo, Zheng-Zhong
• Format: Others
• Language: zh-TW
• Published: 1996
• Online Access: http://ndltd.ncl.edu.tw/handle/44181085466842886237

碩士 === 國立交通大學 === 電子研究所 === 84 === In this thesis, the characteristics of palladium-doped and platinum-doped silicon diodes are studied for the fabrication of the fast switching diodes. The goal of this study is to obtain higher trap concentration to reduce the switching time in diodes. Deep level transient spectroscopy(DLTS)is employed to analyze the electric deep levels and the trap concentration. The effect of the diffusion temperature and the diffustion durationn on theconcentrations of deep levels are studies.It is found that the concentration of deep levels due to Pd or Pt diffusion increases with increasing and duration.In addition, the measured switching time for Pd and Pt decreases with increasing temperature and duration.Furthermore,the leakage current of diodes is proportional to the trap concentration for both palladium and platinum. Finally,the deep energy levels are observed.For palladium,a donor level and an acceptor level are located at Ev+0.52eV and Ec-0.22eV,respectively. For platinum,a donor level and an acceptor level are located at Ev+0.28eV and Ec-0.2eV, respectively.