The study of Deep Levels in Pd and Pt Doped Si P-N Junctions

碩士 === 國立交通大學 === 電子研究所 === 84 === In this thesis, the characteristics of palladium-doped and platinum-doped silicon diodes are studied for the fabrication of the fast switching diodes. The goal of this study is to obtain higher trap concentration to re...

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Bibliographic Details
Main Authors: Qiu, Ming-Jie, 邱明杰
Other Authors: Luo, Zheng-Zhong
Format: Others
Language:zh-TW
Published: 1996
Online Access:http://ndltd.ncl.edu.tw/handle/44181085466842886237