THE CHARACTERISTICS OF 0.1 um nMOSTFET DEVICE IN SOI STRUCTURE
碩士 === 國立交通大學 === 電子研究所 === 84 === The device design considerations of 0.1um nMOSFET in SOI (Silicon on Insulator) structure , are proposed by simulation in this thesis. The purposeof this study is to provide the reference for future design and process of...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
1996
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| Online Access: | http://ndltd.ncl.edu.tw/handle/92022287794533727113 |