Study of the Delta-Doped InGaP/InGaAs/GaAs Pseudomorphic Modulation Doped Field-Effect Transistors
碩士 === 國立交通大學 === 電子研究所 === 84 === We have investigated the existence of electron subbands in delta-doped InGaPmaterial with Si using Subnikov-de Haas measurement at 0.6K. The Subbandenergy levels and the electron wave functions of...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
1996
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| Online Access: | http://ndltd.ncl.edu.tw/handle/93549761595148057061 |