Study of Suppressing Boron Penetration in P+ Gate Capacitors by Using Si-B Layer as Diffusion Source
碩士 === 國立交通大學 === 電子研究所 === 84 === In this thesis, a novel doping technique for the p+ polysilicon gate by using Si-B layer has been studied to substitute the conventional BF2+ implantation process. The retardation of boron diffusion...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
1996
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| Online Access: | http://ndltd.ncl.edu.tw/handle/29798532280388583453 |