Deep levels and electrical characteristics in SnTe-doped GaSb and low temperature InGaAs/GaAs superlattice grown by MBE
碩士 === 國立交通大學 === 電子物理學系 === 84 === The GaSb layers investigated were grown directly on GaAs substrates by molecular beam eiptaxy(MBE) using SnTe source as the dopant. By using admittance spectroscopy, a dominant deep level with the act...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
1996
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| Online Access: | http://ndltd.ncl.edu.tw/handle/82646031951503167266 |