THE GROWTH AND POST HEAT TREATMENT OF GE-DOPED AgGaS2 CTYSTALS

THE GROWTH AND POST HEAT TREATMENT OF GE-DOPED AgGaS2 CTYSTALS

碩士 === 國立交通大學 === 材料科學與工程研究所 === 84 === Ge doped AgGaS2 single crystals of diameters up to 10mm and length up to 68mm for applications in nonlinear optics and blue light emiting diodes have been successfully grown by vertical Bridgman metho...

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Bibliographic Details
Main Authors:	Chung, Wei-Jung, 鍾偉榮
Other Authors:	Peng-Heng Chang
Format:	Others
Language:	zh-TW
Published:	1996
Online Access:	http://ndltd.ncl.edu.tw/handle/40613645495256881849

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