THE GROWTH AND POST HEAT TREATMENT OF GE-DOPED AgGaS2 CTYSTALS
碩士 === 國立交通大學 === 材料科學與工程研究所 === 84 === Ge doped AgGaS2 single crystals of diameters up to 10mm and length up to 68mm for applications in nonlinear optics and blue light emiting diodes have been successfully grown by vertical Bridgman metho...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
1996
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| Online Access: | http://ndltd.ncl.edu.tw/handle/40613645495256881849 |