The Study of Ion Implanted GaAs Power MESFETs for Low Voltage Wireless Communication
碩士 === 國立交通大學 === 材料科學與工程研究所 === 84 === A ion implanted GaAs power MESFET for low voltage wireless communicationhas been developed. Detail processing techniques including ion implantation, annealing, mesa isolation, ohmic contact, gate...
| Main Authors: | , |
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| Format: | Others |
| Language: | zh-TW |
| Published: |
1996
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| Online Access: | http://ndltd.ncl.edu.tw/handle/49247246039420331896 |