| Summary: | 碩士 === 國立交通大學 === 光電工程研究所 === 84 === The structural and electrical properties of the arsenic-ion-
implanted GaAs under different annealing conditions were studied
by using transmission electron microscope (TEM), double crystal
x-ray diffraction , photoluminescene (PL) and current-voltage
(I-V) characteristics measurement techniques. TEM has used to
study the formation of arsenic precipitates and
recrystallization both in n+-type and semi-insulating implanted
films in addition to the structural defects. The peak
concentrations of arsenic precipitates in n+-type implanted GaAs
films are also estimated to be ~2e17cm-3,5e17cm-3,and 4e18cm-3
while the films are implanted with dosage of 10^14, 10^15, and
10^16 cm-2 respectively. And the corresponding size of arsenic
precipitates are 10A, 30A, and 50A separately. The donor-to-
acceptor transitions from SiGa+ or Si clusters to SiAs- were
observed by emitted lines of 840-860nm from PL experiment. The
high resistivity property in the annealing arsenic-ion-implanted
GaAs film seems to bear no relation to the concentration of
arsenic precipitates by characteristic measurements ofcurrent-
voltage.
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