Analysis of Structural and Electrical Properties in Arsenic Ion Implanted GaAs Films under Different Annealing Conditions
碩士 === 國立交通大學 === 光電工程研究所 === 84 === The structural and electrical properties of the arsenic-ion- implanted GaAs under different annealing conditions were studied by using transmission electron microscope (TEM), double crystal x-ray diff...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
1996
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| Online Access: | http://ndltd.ncl.edu.tw/handle/36559686517044903178 |