Characterization of Compound Semiconductors and High Electron mobility Transistor Grown by All Metal-Organic Sources with Modulation Spectroscopy
博士 === 國立成功大學 === 電機工程研究所 === 84 === In this dissertation, the GaAs,InP and,InxGa1-xAs epi- layers and high electron mobility transistor (HEMT) have been successfully grown by home-made low pressure metal- organic chemical vapor deposition (MOCVD) system...
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| Format: | Others |
| Language: | zh-TW |
| Published: |
1996
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| Online Access: | http://ndltd.ncl.edu.tw/handle/22662813590261799986 |