The Study for HgCdTe Far Infrared Detector Devices
碩士 === 國立成功大學 === 電機工程研究所 === 84 === A novel surface treatment method for obtaining high quality interface between passivation and HgCdTe is proposed. By stacking photo-enhanced-native-oxide and ZnS or CdTe films, we successfully passivated...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
1996
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| Online Access: | http://ndltd.ncl.edu.tw/handle/47597742716092519653 |