A study of the plasma Hydrogenation effect on the Character- -istics and Reliability of the Poly-Silicon Thin Film Transistor
碩士 === 國立成功大學 === 電機工程研究所 === 84 === The effects of plasma hydrogenation on the characteristics and reliability of the polysilicon TFT's have been investigated in this paper in detail. Using electrical stress (Vds=-15V , Vgs=0 V) on th...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
1996
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| Online Access: | http://ndltd.ncl.edu.tw/handle/41727283577143151744 |