The influence of 450℃ heat-treatment on the oxygen precipitation in Czochralski silicon wafer.

The influence of 450℃ heat-treatment on the oxygen precipitation in Czochralski silicon wafer.

碩士 === 國立中興大學 === 材料工程學研究所 === 84 === In this study, we report a new set of experimentalresults on oxygen precipitation carried out usingCzochralski silicon wafers : a low-high two stepheat-treatment in N2 ambient was employed : thefirst...

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Bibliographic Details
Main Authors:	Hsu, Wei, 徐瑋
Other Authors:	Hao Ouyang
Format:	Others
Language:	zh-TW
Published:	1996
Online Access:	http://ndltd.ncl.edu.tw/handle/68396051231648745315

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