The influence of 450℃ heat-treatment on the oxygen precipitation in Czochralski silicon wafer.
碩士 === 國立中興大學 === 材料工程學研究所 === 84 === In this study, we report a new set of experimentalresults on oxygen precipitation carried out usingCzochralski silicon wafers : a low-high two stepheat-treatment in N2 ambient was employed : thefirst...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
1996
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| Online Access: | http://ndltd.ncl.edu.tw/handle/68396051231648745315 |