Sintering of Porus Silicon Carbide Substrate and Coating of Its Separation Membrane via Sol-Gel
碩士 === 國立臺灣科技大學 === 化學工程研究所 === 83 === We prepared silicon carbide porous substrate, usingβ-SiC powder doped with alumina produced from ball milling.The sintering of SiC substrate was performed between 1450℃ -1800℃ in Ar. The dopant concent...
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| Format: | Others |
| Language: | zh-TW |
| Published: |
1995
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| Online Access: | http://ndltd.ncl.edu.tw/handle/00040020374601146315 |