| Summary: | 碩士 === 國立臺灣科技大學 === 工程技術研究所 === 83 === An efficient and accurate pseudo-two-dimensional
simulation technique was developed to study the fresh
and post-stress gate currents of MOSFETs. In the fresh case,
we modified the lucky-electron concept by considering the
image-force-induced barrier lowering at the silicon and
metal system for charge carrier injection. The injection
mechanism in n-MOSFETs was channel hot electron injection.
In p-MOSFETs, we focused on the injection mechanism of
drain avalanche hot carriers. In post-stress n-MOSFETs,
the effects of hot-electron induced interface-traps on gate
currents were taken into account. The interface states changed
the channel electric field and increased the injection
probability and gate currents. In post-stress p-MOSFETs, we
presented a model dealing with the channel electric field
distribution with the effect of oxide trapped charge and the
gate currents. Our modified field model can explain the
reduction of the channel electric field and the decrease of
gate currents with increasing oxide trapped electron charge.
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