Study of Post-Stress Gate Currents
碩士 === 國立臺灣科技大學 === 工程技術研究所 === 83 === An efficient and accurate pseudo-two-dimensional simulation technique was developed to study the fresh and post-stress gate currents of MOSFETs. In the fresh case, we modified the lucky-...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
1995
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| Online Access: | http://ndltd.ncl.edu.tw/handle/75902722127520201743 |