Study of Post-Stress Drain Currents

碩士 === 國立臺灣科技大學 === 工程技術研究所 === 83 === This thesis presents three new degraded drain current models for n-MOSFETs with hot-carrier induced interface states and p-MOSFETs with hot-carrier-induced oxide trapped charges. The models were...

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Bibliographic Details
Main Authors: Tz-Hua Tang, 唐子華
Other Authors: Sheng-Lyang Jang
Format: Others
Language:zh-TW
Published: 1995
Online Access:http://ndltd.ncl.edu.tw/handle/41057814581099559334