Study of Post-Stress Drain Currents
碩士 === 國立臺灣科技大學 === 工程技術研究所 === 83 === This thesis presents three new degraded drain current models for n-MOSFETs with hot-carrier induced interface states and p-MOSFETs with hot-carrier-induced oxide trapped charges. The models were...
Main Authors: | , |
---|---|
Other Authors: | |
Format: | Others |
Language: | zh-TW |
Published: |
1995
|
Online Access: | http://ndltd.ncl.edu.tw/handle/41057814581099559334 |