The Study of Instability Mechanism in a-Si:H Thin-Film Transistor and the Device Electrical Performance with the Proposed Interdigitated Drain/Source Structure
碩士 === 國立中央大學 === 電機工程研究所 === 83 === In this thesis, several different plasma-treatment process for hydrogenated amorphous silicon nitride (a-SiNx:H) gate layer were used to study their effects on the hydrogenated amorphous silicon thin-fil...
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| Format: | Others |
| Language: | en_US |
| Published: |
1995
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| Online Access: | http://ndltd.ncl.edu.tw/handle/19956401436635888437 |