The Back-Gate Forward Biasing and Switched Source Impedance Techniques for High Performance CMOS Digital Circuits
碩士 === 國立交通大學 === 電子研究所 === 83 === The major study of this thesis is to investigate and employ the characteristics of a MOS transistor with back gate slightly forward biased. The action of back-gate forward bias can reduce the threshold vol...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
1995
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| Online Access: | http://ndltd.ncl.edu.tw/handle/20557639929793240589 |