Analysis on Gate-Oxide Thickness Dependence of Hot-Carrier- Induced Degradation in Submicrometer LDD nMOSFET's
碩士 === 國立交通大學 === 電子研究所 === 83 === In this thesis, gate-oxide thickness dependecnce of hot- carrier-induced degradation is investigated for LDD nMOSFET' s. It is shown that a thinner gate oxide LDD nMOSFET's causes larg...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
1995
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| Online Access: | http://ndltd.ncl.edu.tw/handle/44807502258254042698 |