Analysis of hot-carrier-induced degradation in poly-emitter BJT's
碩士 === 國立交通大學 === 電子研究所 === 83 === In this work, the degradation behaviors of the fabricated self- aligned and non-self-aligned poly-emitter bipolar transistors have been characterized. A complete physical model considering the rate equatio...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
1995
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| Online Access: | http://ndltd.ncl.edu.tw/handle/57828719239737242664 |