Capacitive pressure sensor

• Main Authors: Yung-Nian Teng, 鄧永年
• Other Authors: Kow-Ming Chang
• Format: Others
• Language: en_US
• Published: 1995
• Online Access: http://ndltd.ncl.edu.tw/handle/31274139779962345769

碩士 === 國立交通大學 === 電子研究所 === 83 === Micro-electro-mechanical systems( MEMS ) is a large field of study, because it combines two major subjects, i.e., electronic and mechanical engineering. Fabricated by IC technologies, emp- loying diaphragm deformed by pressure to generate electrical si- gnal, pressure sensor is the most representative device in this topic. This thesis thus majors in the capacitive pressure sensor in order to get into the field of MEMS. Capacitive pressure sensor can be considered as the parallel plates capacitor. One of the plates is a very thin diaphragm, so it would be deformed as pressure varying and the capacitance wo- uld be changed. Therefore, we can obtain the pressure value by the altering value of the capacitance. Because the structure of the pressure sensor device differs from the traditional IC's devices, the ways of fabricating pressure sensor are also diff- erent from traditional IC's technologies, such as KOH etching, P+ diaphragm formation, anodic bonding technique etc. These all will be extensively discussed in this thesis. At last, we generally introduce the silicon sensors and some special fabricating processes or thinkings about micromachining field in order to understand this topic extensively.