Effect of W barrier in the Al/Barrier/p+n diodes

碩士 === 國立交通大學 === 電子研究所 === 83 === This thesis studies the thermal stability of W contacted p+n junction diodes using the selective CVD W with the silane reduction process. For the Al/W/p+n diode with a W layer of 100nm, the device was abl...

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Bibliographic Details
Main Authors: Kwang-Yang Chan, 詹光陽
Other Authors: Mao-Chieh Chen
Format: Others
Language:en_US
Published: 1995
Online Access:http://ndltd.ncl.edu.tw/handle/93704559782332997391