A New Design Methodology for Deep-Submicrometer SOI MOSFET's
碩士 === 國立交通大學 === 電子研究所 === 83 === This thesis presents a new design methodology for deep- submicrometer SOI MOSFET's using both 2-D numerical analysis and analytic models. In order to understand the complicate device physics underlyin...
| Main Authors: | , |
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| Format: | Others |
| Language: | en_US |
| Published: |
1995
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| Online Access: | http://ndltd.ncl.edu.tw/handle/21734550504899800137 |