Investigation and Application of Room-Temperature Liquid- Phase Deposited Silicon Oxide (SiO2-xFx)

• Main Authors: Chun-Lin Chen, 陳俊麟
• Other Authors: Ching-Fa Yeh
• Format: Others
• Language: en_US
• Published: 1995
• Online Access: http://ndltd.ncl.edu.tw/handle/31883591066610785258

博士 === 國立交通大學 === 電子研究所 === 83 === In this thesis, we developed a novel technology for fluorinated silicon oxide (SiO2-xFx) by using room-temperature liquid-phase deposition method. LPD-oxide can be obtained by adding H2O to the immersing solution which was prepared by dissolving silica in hydrofluorosilicic acid (H2SiF6). We invstigated the growth mechanism of LPD oxide, and first proposed a model for the LPD mechanism that could satisfactorily explain all of the experimental phenomena. We found that the deposition rate could be controlled by varying the quantity of H2O added. The LPD- oxide is lightly oxygen-deficient. FTIR spectra and AES depth profile indicate that a small amount of fluorine was naturally incorporated into the oxide. The composition of LPD-oxide can be represented as SiO2-xFx. We also studied the basic characteristics of LPD-oxide, including the activation energy, the physical/chemical properties, and the electrical properties of the film.