| Summary: | 博士 === 國立交通大學 === 電子研究所 === 83 === In this thesis, we developed a novel technology for fluorinated
silicon oxide (SiO2-xFx) by using room-temperature liquid-phase
deposition method. LPD-oxide can be obtained by adding H2O to
the immersing solution which was prepared by dissolving silica
in hydrofluorosilicic acid (H2SiF6). We invstigated the growth
mechanism of LPD oxide, and first proposed a model for the LPD
mechanism that could satisfactorily explain all of the
experimental phenomena. We found that the deposition rate could
be controlled by varying the quantity of H2O added. The LPD-
oxide is lightly oxygen-deficient. FTIR spectra and AES depth
profile indicate that a small amount of fluorine was naturally
incorporated into the oxide. The composition of LPD-oxide can
be represented as SiO2-xFx. We also studied the basic
characteristics of LPD-oxide, including the activation energy,
the physical/chemical properties, and the electrical properties
of the film.
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