Recrystallization and Dopant Activation of LPCVD Silicon Films and the Characterization of Poly-Si Thin Film Transistors

博士 === 國立交通大學 === 電子研究所 === 83 === In this thesis, the grain growth mechanisms of low-pressure chemical vapor deposition (LPCVD) silicon films, the dopant activation of implanted ions in poly-Si layers,and the electrical characteristics as well as the pa...

Full description

Bibliographic Details
Main Authors: Meng-Jin Tsai, 蔡孟錦
Other Authors: Huang-Chung Cheng
Format: Others
Language:en_US
Published: 1995
Online Access:http://ndltd.ncl.edu.tw/handle/83916018274403690497